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Product Detailed Parameters
- Description：IGBT MODULE 1200V
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.55V @ 15V, 25A
- Input：Three Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：45 A
- Power - Max：230 W
- Current - Collector Cutoff (Max)：500 µA
- Input Capacitance (Cies) @ Vce：1.5 nF @ 25 V
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Overview
The BSM25GP120B2BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, classified as a Power Integrated Module (PIM). It features a full bridge configuration within an EconoPIM3 package. The device supports a collector-emitter maximum voltage of 1.2 kV and delivers a continuous collector current of 25 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter leakage current of 300 nA, and a power dissipation rating of 230 W. The module operates within a temperature range of -40°C to +125°C and utilizes screw mount installation.
Feature Summary
- Full bridge topology for integrated rectification and inversion
- EconoPIM3 housing for standardized mounting and thermal management
- Silicon-based IGBT technology for robust switching performance
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Welding equipment
Procurement Notes
Verify the specific suffix 'B2' against official documentation to confirm pinout compatibility and internal component revisions. Confirm RoHS compliance status through the manufacturer's latest product qualification report. Ensure the sourcing channel provides valid traceability for industrial-grade components.
Selection Notes
Select this module when a compact full bridge solution is required with 1.2 kV blocking capability. The 25 A current rating suits moderate power applications. Verify that the system design accommodates the 230 W power dissipation requirements and the specific thermal resistance characteristics of the EconoPIM3 package.
Part Context
This part belongs to Infineon's BSM series of IGBT modules, which are designed for high-efficiency power conversion. The BSM25GP120 variant represents a specific current rating within the 1200V family. The BOSA1 suffix typically denotes automotive or specific qualification standards, while B2 indicates a hardware revision.
Replacement Considerations
BSM25GP120BOSA1 is listed as an alias in public databases. Verify if the B2 suffix implies a mechanical or electrical change compared to the standard BOSA1 version before substitution.
