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The BSM25GP120B2BPSA1 is a Power Integrated Module (PIM) manufactured by Infineon Technologies, utilizing silicon IGBT technology. It features a full bridge configuration housed in an EconoPIM3 package with screw mount installation. The module supports a collector-emitter maximum voltage of 1.2 kV and delivers a continuous collector current of 25 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter leakage current of 300 nA, and a power dissipation rating of 230 W. The device operates within a temperature range of -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
Verify the specific suffix 'B2' against official datasheets to confirm pinout or parameter variations compared to standard versions. Confirm end-of-life status and availability through authorized distributors, as supply constraints may apply to discontinued or revised part numbers.
Select this module for applications requiring a 1.2 kV full bridge configuration with 25 A continuous current capability. Ensure the cooling solution accommodates the 230 W power dissipation rating and that the operating environment remains within the specified -40°C to +125°C temperature range.
This component belongs to Infineon's BSM series of Power Integrated Modules, designed for industrial power conversion. The EconoPIM3 package provides a standardized form factor for easy integration into existing designs requiring high-power density solutions.
Check for updated revisions such as BSM25GP120BOSA1. Verify pin compatibility and electrical specifications before substituting with other PIMs from the same family.