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BSM300C12P3E201 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is SICFET N-CH 1200V 300A MODULE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSM300C12P3E201
- Description：SICFET N-CH 1200V 300A MODULE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：5.6V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：+22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：15000 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1360W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：Module
- Package / Case：Module
Single FETs, MOSFETs datasheet and documents for BSM300C12P3E201
Single FETs, MOSFETs Overview
The BSM300C12P3E201 is a Silicon Carbide (SiC) power module manufactured by ROHM Semiconductor. It features an N-Channel configuration with a continuous drain current of 300 A and a drain-source voltage rating of 1.2 kV. The device utilizes Trench MOSFET technology for enhanced performance. Key electrical parameters include a gate-source threshold voltage maximum of 5.6 V, a power dissipation capacity of 1.36 kW at case temperature, and an operating temperature range from -40°C to +150°C. The module is designed for screw mount installation.
Single FETs, MOSFETs Feature Summary
- Constructs a chopper topology using integrated SiC DMOSFET and SiC-SBD components
- Delivers low surge current capability and reduced switching losses
- Enables high-speed operation through advanced Trench MOSFET architecture
Single FETs, MOSFETs Applications
- Boost chopper circuits in power conversion systems
- High-frequency inverter applications requiring low switching loss
- Industrial motor drives utilizing silicon carbide technology
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix E201 against official ROHM documentation to confirm pinout and thermal characteristics. Ensure the ordering part number matches the exact datasheet revision. Confirm RoHS compliance status directly from the manufacturer's latest specification sheet before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage handling and efficient thermal management. The 1.2 kV rating suits medium-voltage applications. Consider the 300 A continuous current limit when sizing heatsinks. Verify that the system operates within the specified -40°C to +150°C junction temperature range for reliable long-term performance.
Single FETs, MOSFETs Part Context
This module belongs to ROHM's SiC Power Module series, specifically designed for high-efficiency power electronics. It integrates both switching and freewheeling elements into a single package. The chopper configuration distinguishes it from half-bridge or full-bridge variants within the same product family.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with BSM300D12P4G101 for alternative configurations. Verify compatibility with existing PCB layouts and cooling requirements when substituting similar ROHM SiC modules.
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