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The BSM300GA170DN2HOSA1 is a single-switch IGBT power module manufactured by Infineon Technologies. It features an insulated metal base plate and includes integrated fast free-wheeling diodes. The device supports a collector-emitter voltage of 1700 V and a continuous DC collector current of 440 A at 80 °C case temperature. Maximum ratings include a pulsed collector current of 880 A, a maximum chip temperature of +150 °C, and a thermal resistance from chip to case of ≤ 0.05 K/W for the IGBT. The module requires a minimum gate resistor of 5.6 Ohm.
Verify the specific ordering code C67070-A2706-A67 against the required datasheet revision. Confirm that the application environment remains within the specified insulation test voltage of 4000 Vac and climatic category limits. Ensure the gate drive circuit maintains the recommended minimum resistance value to prevent instability.
Select this component when a high-voltage single-switch topology is required. The 1700 V rating provides headroom for inductive load switching transients. Evaluate the thermal management system based on the specified RthJC values to ensure the junction temperature does not exceed the 150 °C limit under continuous operation.
This module belongs to the GA DN2 series of IGBT power modules. It utilizes standard trench technology optimized for medium-frequency applications. The HOSA1 suffix indicates the specific tape-and-reel or tray packaging variant distributed by authorized channels.
Direct replacements must match the 1700 V / 440 A rating and identical pinout. Verify that substitute modules support the same thermal resistance characteristics and gate drive requirements.