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The BSM30GP60BOSA1 is a three-phase inverter IGBT module manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a maximum collector current of 50 A. The device operates within a junction temperature range of -40°C to +125°C and has a maximum power dissipation of 130 W. It utilizes an isolated flange mount package with 24 terminals, designed for robust thermal management in industrial applications.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm manufacturing details and compliance status. Ensure compatibility with existing cooling infrastructure due to the flange mount requirement. Cross-reference the part number with authorized distributors to avoid counterfeit components.
Select this module for applications requiring a 600V rating and up to 50A continuous current. Consider the 130W power dissipation limit when designing the thermal management system. Verify that the control circuitry supports the required gate drive voltages for reliable switching performance.
This component belongs to the BSM series of insulated gate bipolar transistor modules from Infineon. These modules are engineered for high reliability and efficiency in power conversion systems. The GP designation typically indicates specific chip technology optimized for general purpose industrial use.
Direct replacements include BSM30GP60 and BSM30GP60 DL. Verify pinout compatibility and thermal characteristics before substitution. Consult Infineon's official cross-reference guides for approved alternatives.