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The BSM35GB120DN2HOSA1 is a single IGBT module manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 35 A at 25°C. The device utilizes standard gate input characteristics and is housed in a compact module package designed for baseplate mounting. This component belongs to the BSM35GA series, engineered for efficient power switching in industrial applications.
Verify the exact suffix HOSA1 against the manufacturer's latest datasheet to confirm pinout and electrical specifications match your design requirements. Confirm RoHS compliance status and check for any end-of-life notices or recommended replacements from Infineon before finalizing procurement plans.
Select this module when a 1200V blocking capability and approximately 35A continuous current are required in a small footprint. Ensure the application's thermal management system can handle the specified power dissipation through the baseplate. Verify that the gate drive voltage levels align with the standard gate threshold specifications provided in the official datasheet.
This part belongs to the BSM35GA family of single IGBT modules. These components are widely used in medium-power conversion circuits where high reliability and compact packaging are critical. The DN2 suffix typically denotes specific internal chip technology or packaging variations within the broader product line.
Consult Infineon's official cross-reference tools for verified substitutes. Direct replacements may include other BSM35GA variants with different voltage or current ratings if system constraints allow. Always validate thermal and electrical compatibility before substituting.