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— IC芯片 | 连接器 | 传感器 | 被动器件 —
BSM35GD120DLCE3224BPSA1 is a silicon IGBT module from Infineon Technologies, utilizing EconoPACK 2 packaging. It features a hex configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 50 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.7 V and a power dissipation rating of 280 W. Operating within a temperature range of -40°C to +150°C, it incorporates screw mount installation for secure integration into high-power electronic systems.
Verify the exact part number against official manufacturer databases as suffixes may indicate specific revisions or obsolete status. Confirm RoHS compliance and package type directly with authorized distributors. Request current lifecycle status documentation to ensure long-term availability for production planning.
Select this component based on the required 1.2 kV blocking voltage and 50 A current handling capacity. Ensure the application design accommodates the 280 W power dissipation and utilizes appropriate heatsinking for the EconoPACK 2 form factor. Verify gate drive requirements align with the specified saturation characteristics.
This module belongs to Infineon's BSM series of silicon IGBT modules. It shares the EconoPACK 2 footprint with other variants in the family, facilitating standardized mechanical design across different current ratings. The DLCE designation typically indicates low-loss technology within the product line.
Publicly confirmed direct substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference guides for potential alternatives.