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Product Detailed Parameters
- Description：IGBT MOD 1700V 72A 500W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：72 A
- Power - Max：500 W
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：8 nF @ 25 V
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Overview
The BSM50GB170DN2HOSA1 is a half-bridge IGBT power module manufactured by Infineon Technologies. It integrates two IGBTs and fast free-wheeling diodes within a package featuring an insulated metal base plate. The device supports a collector-emitter voltage of 1700 V, with a DC collector current rating of 50 A at 25 °C and 72 A at 80 °C. Maximum ratings include a pulsed collector current of 144 A at 80 °C and a maximum junction temperature of 150 °C. Electrical characteristics specify a gate threshold voltage between 4.8 V and 6.2 V, and a collector-emitter saturation voltage of up to 3.9 V at 125 °C.
Feature Summary
- Half-bridge configuration integrating IGBTs and fast free-wheeling diodes
- Package design includes an insulated metal base plate for thermal management
- Capable of high-voltage operation with a 1700 V collector-emitter rating
Applications
- Industrial motor drives
- Medium-power inverter systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific ordering suffix HOSA1 against official manufacturer documentation to confirm exact component specifications. Ensure that any additional alphanumeric characters do not alter the electrical parameters or physical dimensions defined in the standard datasheet. Cross-reference the part number with authorized distributors to confirm availability and authenticity before finalizing procurement plans.
Selection Notes
Select this module for applications requiring robust 1700 V blocking capability and reliable switching performance. Evaluate the thermal resistance values and safe operating area curves to ensure adequate heat dissipation under expected load conditions. Confirm that the required gate drive voltages align with the specified ±15 V operational limits for optimal switching characteristics.
Part Context
This component belongs to the BSM series of IGBT power modules produced by Infineon Technologies. The series is designed for medium-power industrial applications, offering integrated protection features and compact packaging solutions. The BSM50GB170DN2 variant specifically targets applications needing high voltage tolerance and efficient power conversion capabilities.
Replacement Considerations
BSM50GB170DN2
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCE) rating is 1700 V.
What is the recommended minimum gate resistance?
The datasheet specifies a minimum gate resistance (RGon,min) of 27 Ohm.
What is the insulation test voltage specification?
The insulation test voltage (Vis) is rated at 4000 Vac for a duration of 1 minute.
