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The BSM50GD120DN2B10BOSA1 is a silicon IGBT power module manufactured by Infineon Technologies. It features a full-bridge configuration with six elements and built-in fast free-wheel diodes. The device has a collector-emitter maximum voltage of 1200 V and a continuous collector current of 72 A at 25 °C. It utilizes the EconoPIM3 package with an insulated metal base plate for screw mounting. The module operates within a temperature range of -40 °C to +150 °C, with a maximum power dissipation of 2100 W.
Verify the specific suffix B10BOSA1 against official documentation to confirm exact manufacturing lot or revision details. Confirm RoHS compliance status through the manufacturer's latest datasheet. Check for end-of-life notices as availability may be restricted. Ensure sourcing channels are authorized distributors to guarantee component authenticity.
Select this module for applications requiring high-voltage isolation and robust thermal management. Verify that the cooling system can handle the specified 2100 W power dissipation. Ensure the gate drive circuit supports the required 20 V maximum gate-emitter voltage. Confirm that the physical dimensions of the EconoPIM3 package fit the target PCB or heatsink layout constraints.
This component belongs to the Infineon BSM series of IGBT modules, designed for medium-power industrial applications. The BSM50GD120DN2 variant typically denotes a 1200V, 72A rating in the EconoPIM3 package. The B10BOSA1 suffix indicates specific ordering or packaging variations defined by Infineon. This series is widely used in converters and inverters where reliability and compact form factors are critical.
Direct replacements include the BSM50GD120DN2. Verify pin compatibility and thermal resistance values before substitution. Other compatible modules in the same voltage and current class should be evaluated for package similarity.