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The BSM50GD170DLBOSA1 is a single IGBT module manufactured by Infineon Technologies, designed for high-power industrial applications. It features a 1700 V collector-emitter voltage rating and a continuous collector current of 50 A at 25°C. The device utilizes D²PAK-7 package technology with a screw-mount configuration. Key electrical parameters include a maximum power dissipation of 360 W and a typical saturation voltage of 2.4 V at 15 V gate drive. The module operates within a junction temperature range of -40°C to +150°C.
Verify the specific suffix 'BOSA1' against official Infineon documentation to confirm exact manufacturing lot details and environmental compliance status. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into final assemblies.
Select this component when a 1700 V rating is required for high-voltage DC link applications. Compare the 50 A current capacity against system load requirements and derating curves. Evaluate the D²PAK-7 footprint against available PCB or chassis space constraints.
This part belongs to Infineon's BSM series of discrete semiconductor modules. These modules are engineered for robust performance in power conversion circuits. The specific model integrates an IGBT chip optimized for switching efficiency and thermal stability.
Consult official cross-reference lists for verified substitutes. Potential alternatives may include other 1700 V IGBT modules from the same manufacturer family, provided pinout and thermal characteristics match.