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The BSM50GP120BOSA1 is a Power Integrated Module (PIM) manufactured by Infineon Technologies, integrating IGBTs and diodes for power conversion. It features a rectifier diode with a repetitive peak reverse voltage of 1600 V and an inverter transistor collector-emitter voltage of 1200 V. The module supports a nominal DC collector current of 50 A at Tc=80°C and a total power dissipation of 360 W at Tc=25°C. It includes a brake-chopper circuit rated for 25 A nominal current. Key electrical parameters include a saturation voltage of 2.55 V max at 25°C and a gate-emitter peak voltage of ±20 V.
Verify the component against official datasheets to confirm authenticity and technical specifications. Check for end-of-life status or obsolescence notices from the manufacturer before procurement. Ensure compatibility with existing cooling systems and mounting hardware. Validate that the specific ordering suffix matches the required electrical characteristics.
Select this module based on the required voltage ratings and current handling capabilities for the target application. Consider the thermal resistance values and maximum junction temperature limits when designing the heatsink interface. Evaluate the switching losses and short-circuit withstand time to ensure protection circuitry is appropriately sized. Verify the mechanical dimensions and mounting torque requirements for the installation.
This component belongs to the BSM series of Power Integrated Modules from Infineon Technologies. These modules are designed for high-power applications requiring compact integration of multiple semiconductor functions. The EconoPIM packaging provides a standardized form factor for industrial power electronics.
BSM50GP120