BSM600D12P4G103

$783.96

Description：MOSFET 2N-CH 1200V 567A MODULE
Series：-

SKU:8689fa4f4eb7 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 567A MODULE
Series：-
Mfr：Rohm Semiconductor
Package：Box
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：567A (Tc)
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：4.8V @ 291.2mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：59000pF @ 10V
Power - Max：1.78kW (Tc)
Operating Temperature：175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

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BSM600D12P4G103

Overview

The BSM600D12P4G103 is a half-bridge SiC power module manufactured by ROHM Semiconductor. It integrates two N-channel SiC UMOSFETs with a rated drain-source voltage of 1200V and a continuous drain current of 567A at Tc=25°C. The device features a maximum junction temperature of 175°C, a total power dissipation of 1780W, and an isolation voltage of 2500Vrms. Electrical characteristics include a typical on-state voltage of 1.6V at 25°C and switching times such as turn-on delay of 110ns and fall time of 35ns under specified test conditions.

Feature Summary

Low surge capability and low switching loss for efficient operation.
High-speed switching performance enabled by SiC technology.
Reduced temperature dependence of electrical parameters.

Applications

Motor drive systems
Inverter and converter circuits
Photovoltaic and wind power generation equipment
Induction heating equipment

Procurement Notes

Verify the latest specifications directly with ROHM sales representatives before implementation, as datasheet information is subject to change without notice. Confirm RoHS compliance status through official channels. Ensure that application designs account for the specific short-circuit withstand limitations inherent to high-current density SiC devices.

Selection Notes

Select this module for applications requiring high voltage blocking and significant current handling in a compact half-bridge configuration. Consider the thermal resistance values when designing heat sink interfaces. Verify that gate drive voltages remain within the absolute maximum ratings to prevent damage to the gate oxide layer during operation.

Part Context

This component belongs to the BSM series of full SiC power modules from ROHM. It utilizes G-type packaging and is constructed using SiC UMOSFET technology. The module is designed for industrial power electronics applications where high efficiency and thermal stability are critical requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult ROHM technical support for potential alternatives or updated product line replacements.