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Product Detailed Parameters
- Description：IGBT MOD 1700V 110A 625W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：110 A
- Power - Max：625 W
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：11 nF @ 25 V
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Overview
The BSM75GB170DN2HOSA1 is a half-bridge IGBT power module manufactured by Infineon Technologies. It integrates an insulated metal base plate and fast free-wheeling diodes. The device supports a collector-emitter voltage of 1700 V and a DC collector current of 75 A at 80 °C case temperature, increasing to 110 A at 25 °C. Maximum ratings include a pulsed collector current of 220 A at 80 °C and a maximum junction temperature of +150 °C. Electrical characteristics specify a gate threshold voltage between 4.8 V and 6.2 V, with a saturation voltage of 3.9 V at 125 °C. Switching times are defined under inductive load conditions at 1200 V.
Feature Summary
- Half-bridge configuration integrating fast free-wheeling diodes
- Package design featuring an insulated metal base plate
- High insulation test voltage capability for safety isolation
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering code C67070-A2702-A67 against the datasheet to confirm component authenticity. Ensure that the HOSA1 suffix aligns with the manufacturer's official documentation regarding packaging or variant specifications before finalizing procurement orders.
Selection Notes
Select this module for applications requiring high voltage blocking capabilities up to 1700 V. Consider the thermal resistance values and safe operating area curves when designing heat sinks. Verify that the required gate drive voltages match the specified ±15 V operational limits for optimal switching performance.
Part Context
This component belongs to the BSM series of IGBT power modules originally developed by Eupec GmbH, which was later acquired by Infineon Technologies. The product line is characterized by robust construction suitable for demanding power electronics environments. The module utilizes silicon technology for reliable operation in high-power conversion circuits.
Replacement Considerations
BSM75GB170DN2
FAQ
What is the minimum recommended gate resistor value?
The datasheet specifies a minimum gate-on resistor (RGon,min) of 22 Ohm.
What is the reverse recovery time of the integrated diode?
The typical reverse recovery time (trr) is 0.3 µs at a junction temperature of 125 °C.
How does the DC collector current rating change with case temperature?
The DC collector current is rated at 110 A at a case temperature of 25 °C and decreases to 75 A at a case temperature of 80 °C.
