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Product Detailed Parameters
- Description：IGBT MOD 1200V 103A 520W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：103 A
- Power - Max：520 W
- Current - Collector Cutoff (Max)：1.5 mA
- Input Capacitance (Cies) @ Vce：5.1 nF @ 25 V
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Overview
The BSM75GD120DN2BOSA1 is a three-phase full-bridge IGBT power module manufactured by Infineon Technologies. It integrates six N-channel IGBTs with fast free-wheeling diodes in a single package. The device features a collector-emitter voltage rating of 1200 V and a maximum DC collector current of 75 A at 25°C case temperature. It utilizes an insulated metal base plate for thermal management and electrical isolation, designed for flange mounting applications.
Feature Summary
- Integrates a complete three-phase bridge topology with built-in fast recovery free-wheeling diodes
- Features an insulated metal base plate providing galvanic isolation between terminals and heatsink
- Constructed as a solderable power module suitable for automated assembly processes
Applications
- Industrial motor drives and servo systems
- Uninterruptible power supplies (UPS)
- Induction heating equipment
Procurement Notes
Verify the specific suffix BOSA1 against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure the ordering code matches the exact revision required for your design. Cross-reference datasheet revisions to confirm pinout consistency before finalizing procurement orders.
Selection Notes
Select this module for high-power AC/DC or DC/AC conversion requiring robust three-phase switching capabilities. Evaluate thermal resistance characteristics relative to the intended heatsink design. Confirm that the 1200 V blocking voltage provides adequate margin for the specific DC bus voltage and transient spikes present in the target application circuit.
Part Context
This component belongs to the BSM series of IGBT power modules, originally developed under Siemens Semiconductor Group and continued by Infineon Technologies. The series is characterized by its ECONOPACK 2K package style, offering a balance of high current density and reliable thermal performance for industrial power electronics applications.
Replacement Considerations
Direct replacements within the same family include BSM50GD120DN2 and BSM100GD120DN2, which share similar packaging and pinouts but differ in current ratings. Verify compatibility with existing gate drive circuits and thermal interface materials when substituting these variants.
