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Product Detailed Parameters
- Description：IGBT MOD 600V 100A 310W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 75A
- Input：Three Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：310 W
- Current - Collector Cutoff (Max)：500 µA
- Input Capacitance (Cies) @ Vce：3.3 nF @ 25 V
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Overview
The BSM75GP60BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, classified under the PIM (Power Intelligent Module) product category. It features a Hex configuration and utilizes the EconoPIM2 package style for screw mounting. The device supports a collector-emitter maximum voltage of 600 V with a continuous collector current rating of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter leakage current of 300 nA, and a power dissipation capacity of 250 W. The operational temperature range spans from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Integrates six IGBTs into a single compact Power Intelligent Module structure
- Utilizes the EconoPIM2 housing design for standardized mechanical integration
- Provides high-voltage switching capability suitable for industrial power conversion
Applications
- Three-phase motor drives
- Induction heating systems
- Uninterruptible power supplies
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches project requirements. Check current lifecycle status as availability may vary. Ensure proper handling procedures are followed due to the sensitive semiconductor nature of the module.
Selection Notes
Select this module when a six-pack IGBT topology is required within a limited footprint. Consider the 600 V rating and 75 A current capacity against load demands. Evaluate thermal management solutions compatible with the EconoPIM2 form factor. Verify that the operating temperature range meets environmental constraints.
Part Context
This component belongs to Infineon's broader portfolio of silicon IGBT modules designed for robust power switching applications. It shares the EconoPIM2 packaging standard with other series, facilitating mechanical interchangeability in certain designs while offering distinct electrical characteristics tailored for medium-power industrial uses.
Replacement Considerations
Consult official cross-reference documentation for verified substitutes. Direct replacements must match the Hex configuration, 600 V rating, and EconoPIM2 package dimensions. Verify pinout compatibility before implementation.
