BSN20

Single FETs, MOSFETs Overview

The BSN20 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It utilizes Trench Power MV MOSFET technology for efficient voltage-controlled switching. Key electrical parameters include a Drain-Source Voltage (VDS) of 50V and a continuous Drain Current (ID) of 300mA. The device features a maximum Total Power Dissipation of 350mW at 25°C ambient temperature. Static characteristics specify a Drain-Source On-Resistance (RDS(ON)) of less than 2.5Ω at VGS=10V and less than 3.0Ω at VGS=4.5V. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench Power MV MOSFET technology for enhanced performance
• Designed as a low input capacitance, fast switching speed switch
• Features low input and output leakage currents

Single FETs, MOSFETs Applications

• Battery operated systems
• Solid-state relays
• Direct logic-level interface applications including TTL and CMOS

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation when sourcing, as the part number appears in distributor catalogs under Shenzhen Slkormicro Semicon Co., Ltd. Confirm that the received components match the SOT-23 package dimensions and pinout defined in the official datasheet. Ensure compliance with RoHS standards and check for moisture sensitivity level requirements during storage and handling procedures prior to assembly.

Single FETs, MOSFETs Selection Notes

Select this component for small signal switching tasks requiring a 50V breakdown voltage and 300mA current capacity. The low gate threshold voltage facilitates direct interfacing with standard logic families like TTL and CMOS without additional drive circuitry. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures or enclosed environments.

Single FETs, MOSFETs Part Context

This component belongs to the discrete semiconductor transistor category, specifically functioning as an N-Channel Enhancement Mode Field Effect Transistor. It is designed for surface mount integration using the SOT-23 package format. The device serves as a voltage-controlled switch suitable for space-constrained electronic designs requiring reliable switching performance.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other N-Channel MOSFETs featuring similar 50V VDS and 300mA ID ratings. Verify compatibility regarding RDS(ON) specifications and gate charge values to ensure equivalent switching speeds and drive requirements in the target application circuit.