BSN20,235

Single FETs, MOSFETs Overview

The BSN20,235 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in a SOT23 (TO-236AB) plastic surface-mounted package. The device features a drain-source voltage rating of 50 V and a continuous drain current of 173 mA at 25 °C with VGS = 10 V. Key electrical parameters include a maximum on-state resistance of 15 Ω at VGS = 10 V and 20 Ω at VGS = 5 V, both measured at ID = 100 mA. The total power dissipation is rated at 0.83 W at 25 °C, with an operating junction temperature range from -65 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchMOS technology for very fast switching performance.
• Logic level compatible design allows direct interface with standard logic circuits.
• Subminiature SOT23 surface mount package suitable for space-constrained applications.

Single FETs, MOSFETs Applications

• Relay driver
• High speed line driver
• Logic level translator

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code BSN20,235 against the manufacturer's current product specification Rev. 03 dated 26 June 2000. Confirm that the SOT23 package variant matches the required pinout: Pin 1 Gate, Pin 2 Source, Pin 3 Drain. Ensure the component meets the absolute maximum ratings defined in the datasheet, particularly regarding thermal resistance and junction temperature limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component for low-current switching applications requiring logic-level compatibility. The 50 V drain-source voltage and 173 mA continuous current limit define its operational envelope. Consider the thermal characteristics, specifically the 350 K/W junction-to-ambient thermal resistance on a minimum footprint PCB, when designing heat dissipation strategies for the SOT23 package.

Single FETs, MOSFETs Part Context

The BSN20 is part of Nexperia's portfolio of discrete, logic, and PowerMOS semiconductors. Originally developed under Philips Semiconductors, the product was transferred to Nexperia following the spin-off of the Standard Product business in February 2017. The device represents a transition from VDMOS to TrenchMOS technology, offering improved switching speeds and performance in a compact surface-mount form factor.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical specifications if considering alternative N-channel MOSFETs in the SOT23 package.

Single FETs, MOSFETs FAQ

What is the gate-source voltage rating for the BSN20?

The maximum DC gate-source voltage (VGS) is ±20 V.

How does the on-state resistance vary with gate voltage?

The maximum RDSon is 15 Ω at VGS = 10 V and increases to 20 Ω at VGS = 5 V, both measured at a drain current of 100 mA.