BSO051N03MS G

$0.52

Description：MOSFET N-CH 30V 14A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:52e5846f3c6d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO051N03MS G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 14A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO051N03MS G

Description：MOSFET N-CH 30V 14A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.1mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4300 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.56W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO051N03MS G

BSO051N03MS G

Single FETs, MOSFETs Overview

The BSO051N03MS G is a single N-Channel enhancement mode MOSFET manufactured by Infineon Technologies using silicon technology. It features a PG-DSO-8 surface mount package with a drain-source breakdown voltage of 30 V and a continuous drain current of 14 A at ambient temperature. The device exhibits a maximum on-resistance of 5.1 mOhms and a power dissipation rating of 1.56 W. It operates within a temperature range of -55°C to +150°C, with a gate-source voltage limit of ±20 V.

Single FETs, MOSFETs Feature Summary

Single N-Channel configuration for efficient switching applications
Enhancement mode operation optimized for low on-resistance
Surface mount PG-DSO-8 package design for compact integration

Single FETs, MOSFETs Applications

Low voltage DC-DC converter circuits
Power management modules requiring 30V tolerance
General purpose switching applications in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' indicates RoHS compliance status through official documentation. Confirm the exact thermal resistance values and derating curves from the manufacturer datasheet before finalizing thermal design. Ensure the ordering code matches the required packaging format, as availability may vary between cut tape and reel options depending on the distributor.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-Channel MOSFET with moderate current handling is required in an SOIC-8 footprint. Compare the 5.1 mOhm on-resistance against circuit loss requirements. Consider the 1.56 W power dissipation limit and ensure adequate PCB copper area for heat sinking. Verify that the gate charge characteristics meet the driving capability of the intended controller IC.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3M family of power MOSFETs from Infineon Technologies. The series focuses on optimizing the trade-off between on-resistance and gate charge for cost-effective power solutions. The PG-DSO-8 package provides a balance between thermal performance and board space efficiency for small signal and small power applications.