BSO064N03S

$0.54

Description：MOSFET N-CH 30V 12A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:c9c9c24eded3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO064N03S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 12A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO064N03S

Description：MOSFET N-CH 30V 12A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3620 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.56W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO064N03S

BSO064N03S

Single FETs, MOSFETs Overview

BSO064N03S is a single-channel N-channel Gallium Nitride (GaN) field-effect transistor manufactured by Infineon Technologies. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 12 A. The device exhibits a low on-resistance of 6.4 mOhms, enabling efficient power switching. It operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 1.56 W. The component utilizes a DSO-8 surface-mount package and includes an enhancement mode configuration with gate-source voltage limits of ±20 V.

Single FETs, MOSFETs Feature Summary

Utilizes Gallium Nitride technology for high-efficiency switching performance
Features low on-resistance to minimize conduction losses
Supports wide operating temperature range for robust thermal management

Single FETs, MOSFETs Applications

High-frequency power conversion circuits
Point-of-load DC-DC converters
Industrial motor drive systems

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of this component before design finalization. Confirm availability through authorized distributors or secondary market suppliers. Ensure that any replacement strategy accounts for potential lead time variations associated with end-of-life products. Validate pin compatibility if substituting with alternative GaN devices from other manufacturers.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact form factors and high switching speeds. The DSO-8 package suits space-constrained designs. Consider the thermal constraints imposed by the 1.56 W power dissipation rating during PCB layout. Evaluate gate drive requirements against the specified ±20 V gate-source voltage limits to ensure reliable operation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's portfolio of GaN-based power semiconductors designed for advanced power electronics. It represents a shift from traditional silicon MOSFETs to wide-bandgap materials for improved efficiency. The specific model targets modern power supply architectures demanding reduced size and enhanced thermal performance in critical infrastructure and consumer electronics.