BSO065N03MSGXUMA1

Single FETs, MOSFETs Overview

The BSO065N03MSGXUMA1 is a single N-channel Power MOSFET from Infineon Technologies, manufactured using silicon technology. It features a DSO-8 surface-mount package and operates with a drain-source voltage of 30 V and a continuous drain current of 13 A. The device exhibits a maximum on-resistance of 6.5 mOhms at room temperature. Electrical characteristics include a gate-source voltage range of -20 V to +20 V and a power dissipation capacity of 1.56 W. Switching performance is defined by typical turn-on and turn-off delay times of 12.2 ns and 15.6 ns, respectively, with rise and fall times of 6.2 ns and 6.4 ns. The component supports an operating temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for efficient switching control
• Low on-resistance design to minimize conduction losses in power circuits
• Robust thermal management capabilities supporting high junction temperatures up to 150 °C

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring low-side switching
• Motor control applications utilizing N-channel topology
• General-purpose power switching in industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XUMA1 to confirm tape-and-reel packaging quantities and handling requirements. Ensure compatibility with standard SOIC-8 footprints during PCB layout. Confirm that the component status aligns with long-term supply plans, as availability may vary based on production cycles. Cross-reference datasheet electrical limits with system operational constraints to prevent overstress conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rated N-channel MOSFET with moderate current handling is required in a compact DSO-8 package. The 6.5 mOhm on-resistance offers a balance between conduction loss and cost for low-voltage applications. Consider the 13 A continuous current rating against thermal dissipation limits in the final enclosure. Verify that the gate drive voltage remains within the specified ±20 V range for reliable operation.

Single FETs, MOSFETs Part Context

This part belongs to the BSO065N03 series of N-channel MOSFETs designed for general power switching. It utilizes Infineon's silicon technology to provide reliable performance in surface-mount configurations. The DSO-8 package facilitates automated assembly and space-constrained designs. It serves as a discrete solution for low-voltage DC-DC conversion and load switching tasks where moderate current levels are sufficient.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 30 V/13 A/6.5 mOhm specifications and DSO-8 footprint. Verify pinout compatibility and thermal resistance values before substitution.