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BSO080P03NS3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 12A 8DSO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO080P03NS3GXUMA1
- Description：MOSFET P-CH 30V 12A 8DSO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 14.8A, 10V
- Vgs(th) (Max) @ Id：3.1V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：6750 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO080P03NS3GXUMA1
Single FETs, MOSFETs Overview
The BSO080P03NS3GXUMA1 is a single-channel P-Channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a -30V drain-source voltage rating and an SOIC-8 surface-mount package. Key electrical parameters include a maximum continuous drain current of 14.8A at 25°C, a typical on-resistance of 8.1 milliohms at 10V gate drive, and a gate charge of 61 nanocoulombs. The device supports a maximum power dissipation of 2.5W and operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology integration for optimized performance in low-voltage applications
- Enhanced switching characteristics with defined rise and fall times
- Robust thermal design suitable for surface-mount assembly
Single FETs, MOSFETs Applications
- Low-side switching in automotive electronics
- Power management circuits requiring high efficiency
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'GXUMA1' against official Infineon documentation to confirm tape-and-reel packaging details and RoHS compliance status. Ensure the component matches the exact OptiMOS generation specified in the datasheet. Cross-reference the manufacturer part number with authorized distributors to avoid obsolete or counterfeit variants.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a P-Channel MOSFET with a 30V breakdown voltage and moderate current handling capabilities. The SOIC-8 package offers a balance between thermal performance and board space constraints. Consider the 8.1 milliohm on-resistance for conduction loss calculations and verify that the 61 nanocoulomb gate charge aligns with the driving circuit's speed requirements.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS family of power transistors designed by Infineon Technologies. The series focuses on providing high reliability and efficiency for automotive and industrial applications. The specific model utilizes silicon technology and is engineered for robust operation under varying thermal conditions.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Generic cross-references may not match the specific OptiMOS characteristics or package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
