BSO110N03MSGXUMA1

$0.68

Description：MOSFET N-CH 30V 10A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:20702f928561 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO110N03MSGXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 10A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO110N03MSGXUMA1

Description：MOSFET N-CH 30V 10A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 12.1A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.56W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO110N03MSGXUMA1

BSO110N03MSGXUMA1

Single FETs, MOSFETs Overview

The BSO110N03MSGXUMA1 is an N-channel Power-MOSFET from the OptiMOS 3 M-Series, packaged in PG-DSO-8. It features a drain-source voltage of 30 V and a continuous drain current of 12.1 A at 25 °C. The maximum on-resistance is 11 mΩ at VGS=10 V and 13.9 mΩ at VGS=4.5 V. Total gate charge is typically 7.2 nC at 4.5 V and 15 nC at 10 V. Input capacitance is 1100 pF, output capacitance is 390 pF, and thermal resistance junction-to-soldering point is 35 K/W.

Single FETs, MOSFETs Feature Summary

Optimized for 5V driver applications including notebooks, VGA, and POL circuits
Features low figure of merit (FOM) suitable for high-frequency SMPS switching
100% avalanche tested for enhanced reliability

Single FETs, MOSFETs Applications

Notebook power systems
VGA power supplies
Point-of-load (POL) converters

Single FETs, MOSFETs Procurement Notes

Verify the component against official Infineon datasheets to confirm specifications match the required design parameters. Ensure the package type and marking align with manufacturing requirements. Check for RoHS compliance and halogen-free status as specified in the product documentation before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance at 4.5 V gate drive voltages. The optimized FOM supports high-frequency operation in space-constrained applications. Consider the thermal resistance values when designing heat dissipation strategies for the PG-DSO-8 package.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 M-Series family, designed specifically for consumer-level applications. It utilizes silicon technology and offers Pb-free plating. The series focuses on balancing low on-resistance with efficient gate charge characteristics for modern power management needs.