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BSO130P03SHXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 9.2A 8DSO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO130P03SHXUMA1
- Description：MOSFET P-CH 30V 9.2A 8DSO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 11.7A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：3520 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.56W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO130P03SHXUMA1
Single FETs, MOSFETs Overview
The BSO130P03SHXUMA1 is a P-Channel Power MOSFET from Infineon Technologies, part of the OptiMOS P series. It features a 30 V drain-source voltage rating and supports a continuous drain current of 9.2 A. The device utilizes a PG-DSO-8 surface-mount package. Key electrical characteristics include a maximum on-state resistance of 9900 µΩ and a power dissipation capacity of 1.56 W at ambient temperature.
Single FETs, MOSFETs Feature Summary
- OptiMOS P technology for optimized performance
- Low on-state resistance for efficiency
- Surface-mount DSO-8 packaging
Single FETs, MOSFETs Applications
- Power management circuits
- Motor control applications
- General switching loads
Single FETs, MOSFETs Procurement Notes
Verify the complete ordering code including suffixes to ensure correct tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation before integration. Cross-reference datasheet revisions to align with current manufacturing standards and environmental regulations.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage applications requiring efficient P-channel switching. Evaluate thermal constraints based on the specified power dissipation limits. Ensure the driving circuitry matches the gate charge requirements for optimal switching speeds in the target design.
Single FETs, MOSFETs Part Context
This component belongs to Infineon's OptiMOS P family, designed for high-efficiency power switching. It serves as a complement to N-channel devices in half-bridge configurations or single-ended switches within automotive and industrial power systems.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists for direct equivalents. Verify pin compatibility and electrical ratings when considering alternative manufacturers.
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