BSO201SPNTMA1

Description：MOSFET P-CH 20V 14.9A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dbb37b3dff7b Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO201SPNTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 14.9A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO201SPNTMA1

Description：MOSFET P-CH 20V 14.9A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：14.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：8mOhm @ 14.9A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：128 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：5962 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO201SPNTMA1

BSO201SPNTMA1

Single FETs, MOSFETs Overview

The BSO201SP is a P-Channel OptiMOS-P small-signal transistor in an SO-8 package. It features a drain-source voltage of -20 V, a continuous drain current of -14.9 A at 25°C, and a maximum on-state resistance of 12.9 mΩ at VGS=-2.5 V. The device supports a gate-source voltage of ±12 V, operates between -55°C and +150°C, and dissipates up to 2.5 W. Key dynamic characteristics include a total gate charge of 128 nC max and avalanche energy rating of 248 mJ.

Single FETs, MOSFETs Feature Summary

Super Logic Level operation rated for 2.5 V gate drive
Avalanche energy rated capability
High reverse diode dv/dt rating

Single FETs, MOSFETs Applications

Low-side switching applications
Power management circuits
Motor control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure compatibility with the required package and tape-and-reel specifications. Confirm that the component meets all necessary automotive or industrial qualification standards relevant to your design environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance at logic-level gate voltages. Ensure thermal management accounts for the 35 K/W junction-to-solder-point resistance. Verify that the circuit does not exceed the single-pulse avalanche energy limits during transient events.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS-P family, designed for efficient power switching. It utilizes silicon technology to provide enhanced performance in small-signal applications compared to standard MOSFETs, specifically optimizing for low gate charge and fast switching speeds within a compact surface-mount footprint.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative P-Channel MOSFETs with similar -20 V ratings and comparable RDS(on) values. Ensure pinout compatibility with the SO-8 package if direct replacement is required.