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BSO203SPHXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 7A 8DSO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO203SPHXUMA1
- Description：MOSFET P-CH 20V 7A 8DSO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：21mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：3750 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO203SPHXUMA1
Single FETs, MOSFETs Overview
The BSO203SPHXUMA1 is a P-channel power MOSFET from Infineon's OptiMOS family, housed in an 8-lead PG-DSO package. It supports a drain-source voltage of 20V and a continuous drain current of 7A at 25°C. Key electrical characteristics include a maximum on-resistance of 21mΩ at 4.5V gate drive and a gate charge of 39nC. The device operates within a junction temperature range of -55°C to 150°C and features logic-level gate control for efficient switching applications.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology providing low on-resistance for high efficiency
- Logic-level gate drive capability for direct interface with standard logic
- Robust thermal performance with a wide operating temperature range
Single FETs, MOSFETs Applications
- High-speed data transmission circuits
- Optical sensing systems
- Power management modules requiring P-channel switching
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm the specific ordering suffix matches the required tape-and-reel configuration. Check for RoHS compliance status and ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage prior to assembly.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a compact P-channel solution with low Rds(on). Ensure the gate drive voltage aligns with the specified threshold for optimal conduction. Consider the PG-DSO-8 footprint constraints and verify thermal dissipation capabilities against the 1.6W power rating under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™ portfolio, which integrates advanced trench gate technology for power MOSFETs. The series is engineered to balance switching speed and conduction losses, targeting automotive and industrial applications where reliability and space efficiency are critical design parameters.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical specifications before considering alternative manufacturers.
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