BSO204PNTMA1

Overview

The BSO204P is a dual P-channel OptiMOS-P power transistor in a P-SO 8 package. It features a -20 V drain-source voltage and a maximum on-state resistance of 30 mΩ at VGS = -4.5 V. The device supports a continuous drain current of -7 A at 25°C and handles pulsed currents up to -28 A. Key electrical parameters include an input capacitance of 1513 pF, total gate charge of 35.8 nC, and a reverse diode forward recovery time of 35.9 ns. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual P-Channel configuration for synchronized switching applications
• Super Logic Level operation rated for 2.5 V gate drive
• Avalanche energy rated capability for robust transient handling
• High dv/dt rating for fast switching performance

Applications

• Synchronous rectification in switched-mode power supplies
• Low-voltage DC/DC converter circuits
• Motor control driver stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the datasheet revision date with your procurement records to guarantee access to the most recent thermal and electrical characteristics.

Selection Notes

Select this component for low-voltage applications requiring dual P-channel isolation in a compact surface-mount footprint. Evaluate the 30 mΩ on-resistance against your conduction loss limits at the expected operating current. Confirm that the 2.5 V logic level compatibility matches your controller output voltages for efficient gate driving without additional level shifting circuitry.

Part Context

This part belongs to Infineon's OptiMOS-P family, designed for general-purpose power switching. It utilizes enhancement mode technology to provide reliable performance in automotive and industrial environments. The P-SO 8 package offers a balance between thermal dissipation capabilities and board space efficiency for dense electronic designs.

Replacement Considerations

Check for direct pin-compatible alternatives within the same OptiMOS-P series that offer lower RDS(on) or higher current ratings. Verify that any substitute maintains the -20 V breakdown voltage and Super Logic Level gate threshold requirements.

FAQ

What is the maximum single-pulse avalanche energy rating?

The device is rated for 63 mJ of single-pulse avalanche energy under conditions of ID = -7 A, VDD = -10 V, and RGS = 25 Ω.

How does the reverse diode perform during fast switching?

The integrated reverse diode has a maximum reverse recovery time of 35.9 ns and a dv/dt rating of 6 kV/µs, supporting high-speed commutation.

Is the gate threshold voltage suitable for 3.3 V logic systems?

Yes, the typical gate threshold voltage is 0.9 V, and it is rated as a Super Logic Level device starting at 2.5 V, ensuring reliable turn-on with 3.3 V logic signals.