BSO207PHXUMA1

Overview

The BSO207PHXUMA1 is a dual P-Channel OptiMOS power transistor in a PG-DSO-8 package. It features a drain-source voltage of -20 V and a continuous drain current of -5.7 A at 25 °C. The maximum on-resistance is 45 mΩ at VGS = 4.5 V and 70 mΩ at VGS = 2.5 V. The device supports an operating temperature range from -55 °C to 150 °C, with a single-pulse avalanche energy rating of 44 mJ.

Feature Summary

• Dual P-Channel configuration within a compact SO8 package
• Super Logic Level gate drive capability rated for 2.5 V operation
• Qualified according to JEDEC standards for target applications
• Halogen-free construction compliant with IEC61249-2-21

Applications

• Low-side switching in DC-DC converter topologies
• Load switching for logic-level control interfaces
• Power management circuits requiring Super Logic Level compatibility

Procurement Notes

Verify the component marking '207P' against the datasheet to confirm authenticity. Ensure the ordering suffix XUMA1 matches the required tape-and-reel packaging specification. Confirm RoHS compliance and lead-free plating status during incoming inspection to meet environmental requirements.

Selection Notes

Select this component when a dual P-Channel MOSFET with low gate charge is required for efficient switching. The 2.5 V logic level rating allows direct interfacing with standard microcontrollers without additional level shifting. Evaluate thermal resistance values based on the specific PCB copper area available for heat dissipation.

Part Context

This part belongs to Infineon's OptiMOS P family, designed for high-efficiency power switching. The technology integrates advanced trench gate structures to minimize conduction losses while maintaining robust avalanche capabilities suitable for inductive load environments.

Replacement Considerations

BSO207P H

FAQ

What is the maximum continuous drain current at 70 °C ambient temperature?

At an ambient temperature of 70 °C with VGS = 4.5 V, the maximum continuous drain current is derated to -4.0 A.

How does the on-resistance vary with gate-source voltage?

The maximum RDS(on) increases from 45 mΩ at VGS = 4.5 V to 70 mΩ at VGS = 2.5 V, reflecting the Super Logic Level design optimization.

Is the device qualified for automotive applications?

The datasheet states the device is qualified according to JEDEC standards for target applications but does not explicitly list AEC-Q101 automotive qualification.