BSO207PNTMA1

Overview

The BSO207P is a dual P-channel OptiMOS-P small-signal MOSFET in an SO-8 package. It features a -20 V drain-source breakdown voltage and a continuous drain current of -5.7 A at 25°C. The device exhibits a maximum on-resistance of 45 mΩ at VGS = -4.5 V. It supports avalanche energy ratings up to 44 mJ and reverse diode dv/dt ratings of -6 kV/µs. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration with enhancement mode operation
• Super Logic Level capability rated for 2.5 V gate drive
• Avalanche rated for robustness against transient energy events
• High dv/dt rating for fast switching applications

Applications

• Low-side switching in automotive power distribution
• Industrial motor control circuits
• General-purpose power management systems

Procurement Notes

Verify the specific ordering code, as the datasheet lists Q67042-S4068 for the BSO207P. Confirm RoHS compliance status and lead times directly with Infineon or authorized distributors. Ensure the selected package matches the required PCB footprint for thermal performance.

Selection Notes

Select this component for applications requiring dual P-channel isolation in a compact surface-mount package. Consider the 45 mΩ on-resistance for efficiency requirements at -5.7 A loads. Verify that the -20 V voltage rating aligns with the system's supply rails and transient conditions.

Part Context

This part belongs to Infineon's OptiMOS-P family, designed for small-signal power applications. It integrates advanced trench technology to minimize on-resistance while maintaining high reliability. The dual configuration allows for synchronized switching or independent control within a single package.

Replacement Considerations

Check for direct pin-compatible alternatives within the OptiMOS-P series. Verify that any substitute maintains the -20 V rating and similar RDS(on) characteristics. Ensure the replacement package matches the SO-8 form factor for board compatibility.

FAQ

What is the maximum avalanche energy rating?

The BSO207P is rated for 44 mJ of single-pulse avalanche energy under specified test conditions.

Is the device suitable for 2.5 V logic levels?

Yes, it features Super Logic Level technology, allowing effective switching with a 2.5 V gate drive.

What is the reverse diode dv/dt rating?

The integrated body diode has a dv/dt rating of -6 kV/µs, supporting fast switching transitions.