BSO215C

$0.33

Description：MOSFET N/P-CH 20V 3.7A 8SO
Series：SIPMOS®

SKU:b364064b1886 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 3.7A 8SO
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.7A
Rds On (Max) @ Id, Vgs：100mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id：2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：246pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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BSO215C

Overview

The BSO215C is a dual-channel SIPMOS small-signal transistor featuring integrated N- and P-channel MOSFETs in an SO-8 package. It supports a drain-source voltage of ±20 V and continuous drain currents of ±3.7 A at 25 °C. The device exhibits low on-state resistance, typically 0.1 Ω at VGS = 4.5 V. Rated for logic-level operation, it includes avalanche and dv/dt capabilities with a maximum junction temperature of 150 °C.

Feature Summary

Dual N- and P-channel configuration within a single package
Logic-level enhancement mode operation
Avalanche energy rated capability
High dv/dt rating for reverse diode

Applications

Half-bridge driver circuits
Motor control applications
Power switching modules

Procurement Notes

Verify the specific ordering code Q67041-S4025 against current Infineon databases to confirm availability and RoHS compliance status. Ensure the procurement channel provides official documentation matching the preliminary data sheet version. Confirm that the SO-8 package footprint aligns with design requirements before finalizing orders.

Selection Notes

Select this component for designs requiring complementary N- and P-channel pairs in a compact form factor. Consider the thermal resistance values when calculating power dissipation limits at elevated ambient temperatures. Verify gate threshold voltage compatibility with the driving logic levels to ensure reliable switching performance across the specified operating range.

Part Context

This component belongs to Infineon's SIPMOS family of small-signal transistors. It integrates two discrete MOSFETs into one package to save board space. The technology focuses on providing robust switching characteristics for general-purpose power applications requiring complementary channel configurations.