BSO301SPHXUMA1

$2.13

Description：MOSFET P-CH 30V 12.6A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dbe13c734843 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO301SPHXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 12.6A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO301SPHXUMA1

Description：MOSFET P-CH 30V 12.6A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 14.9A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：136 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5890 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.79W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO301SPHXUMA1

BSO301SPHXUMA1

Single FETs, MOSFETs Overview

The BSO301SPHXUMA1 is a P-Channel OptiMOS-P power transistor in an 8-pin PG-DSO-8 surface-mount package. It features a drain-source breakdown voltage of -30 V and a continuous drain current of -14.9 A at 25 °C. The device exhibits a maximum on-state resistance of 8.0 mΩ at VGS = -10 V and 12.0 mΩ at VGS = -4.5 V. Total gate charge is typically 102 nC, with a peak forward transconductance of 44 S. Power dissipation reaches 2.5 W at 25 °C ambient temperature, supporting operation up to 150 °C junction temperature.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust energy handling
Logic level enhancement mode operation
Integrated reverse diode with defined recovery characteristics

Single FETs, MOSFETs Applications

High-side switching applications
Motor control circuits
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XUMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with standard JEDEC moisture sensitivity levels before assembly. Confirm that the PG-DSO-8 footprint matches the target PCB design constraints. Validate thermal performance requirements against the provided junction-to-ambient resistance values.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current density in a compact surface-mount form factor. The low on-resistance supports efficient power conversion with minimal heat generation. Consider the avalanche rating for environments prone to inductive load switching transients. Evaluate the logic-level threshold for direct interface with standard digital control signals.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-P family of P-Channel MOSFETs from Infineon Technologies. The series is engineered for high efficiency and reliability in power switching applications. The technology integrates advanced cell structures to minimize conduction losses while maintaining robust switching performance across varying temperature conditions.