BSO330N02KGFUMA1

Overview

The BSO330N02KGFUMA1 is a dual N-channel OptiMOS™2 Power-Transistor in a PG-DSO-8 package. It features a 20 V drain-source breakdown voltage and a maximum continuous drain current of 6.5 A at 25 °C. The device exhibits a low on-resistance of 30 mΩ at VGS=4.5 V and 50 mΩ at VGS=2.5 V. Total gate charge is typically 4.9 nC, with a single-pulse avalanche energy rating of 19 mJ. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration for synchronous rectification
• Super Logic level operation rated for 2.5 V gate drive
• Avalanche rated for robust transient handling

Applications

• Fast switching converters
• Synchronous rectification circuits
• DC-to-DC converter stages

Procurement Notes

Verify the component against the official Infineon datasheet revision 1.02. Confirm the specific ordering suffix matches the required tape-and-reel packaging format. Ensure the part number corresponds to the PG-DSO-8 package variant. Cross-reference the manufacturer's lifecycle status before finalizing procurement plans.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs with low gate charge. The 2.5 V logic-level threshold makes it suitable for low-voltage control systems. Evaluate thermal resistance values against the target PCB footprint and cooling area requirements to ensure safe operating temperatures under load.

Part Context

This component belongs to the OptiMOS™2 family of power transistors designed by Infineon Technologies. It utilizes advanced silicon technology to achieve low on-resistance and fast switching speeds. The dual configuration allows for compact designs in bridge or half-bridge topologies within the broader portfolio of automotive-grade compliant power semiconductors.

Replacement Considerations

BSO330N02KG