ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5A 8DSO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A
- Rds On (Max) @ Id, Vgs：35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2V @ 6µA
- Gate Charge (Qg) (Max) @ Vgs：3.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：480pF @ 15V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8
- Grade：-
- Qualification：-
Download product information
Overview
The BSO350N03 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS2 family. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 5 A at 25°C. The device is housed in a DSO-8 surface-mount package. Key electrical characteristics include a typical gate charge (QG) of 6.1 nC at 4.5 V and 12.6 nC at 10 V. The maximum on-resistance (RDS(on)) is specified as 15 mΩ at 10 V gate drive and 18.2 mΩ at 4.5 V gate drive. The component supports a pulsed drain current of 65 A and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- OptiMOS2 technology providing robust power switching performance
- Low on-resistance for efficient conduction
- Fast switching capabilities with low gate charge
- Automotive-grade reliability suitable for harsh environments
Applications
- DC-DC converter modules
- Motor control applications
- Power management circuits
- Automotive electronics systems
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified partners. Request original manufacturer documentation and material content sheets to confirm compliance with RoHS and REACH standards. Ensure storage conditions meet semiconductor handling guidelines to prevent moisture sensitivity damage prior to soldering.
Selection Notes
Select this component for applications requiring 30 V N-channel switching with moderate current demands. Consider the DSO-8 package for space-constrained PCB layouts. Evaluate thermal management requirements based on the specified RthJA value. Confirm compatibility with logic-level gate drive voltages if operating at lower gate thresholds.
Part Context
The BSO350N03 is part of Infineon's OptiMOS2 portfolio, designed for high-efficiency power switching. It represents an evolution in power MOSFET technology, offering improved performance over previous generations. The device is engineered for automotive and industrial applications where reliability and efficiency are critical. It complements other OptiMOS variants by providing a balance of voltage rating and current capacity.
Replacement Considerations
The BSO350N03 is marked as obsolete and no longer manufactured. Available substitutes include similar N-channel MOSFETs such as the IRF7313TRPBF. Verify pinout compatibility, electrical parameters, and thermal characteristics when selecting alternative components.
