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BSO4410T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 11.1A 8SO. Review the specifications below when checking this part for your BOM.
The BSO4410 is an N-Channel enhancement mode logic level MOSFET from Infineon Technologies, packaged in a surface-mount SO-8 configuration. It features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 11.1 A at 25°C. The device exhibits a maximum on-state resistance of 13 mΩ at VGS=10V and 18.8 mΩ at VGS=4.5V. Key dynamic parameters include a total gate charge of 21 nC and a reverse diode dv/dt rating of 6 kV/µs. Thermal performance supports operation up to 150°C with a power dissipation capacity of 2.5 W.
Verify the specific ordering code Q67042-S4096 against current Infineon catalogs to confirm availability status. Check for any recent product discontinuation notifications or lifecycle changes prior to finalizing procurement plans. Ensure component authenticity through authorized distribution channels.
Select this component when designing low voltage systems requiring robust avalanche handling and high speed switching. Evaluate thermal constraints carefully as power dissipation is limited to 2.5 W. Confirm that the 30 V breakdown voltage provides adequate margin for the target application's peak transient voltages.
This part belongs to the OptiMOS/G01 family of small-signal transistors designed for efficient power management. It utilizes silicon technology optimized for low voltage operations. The SO-8 package facilitates automated surface mount assembly while providing sufficient thermal coupling for moderate power levels.
Consult official replacement lists for verified substitutes. Generic cross-references may not match the specific avalanche and dv/dt characteristics documented for this model.
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