Single FETs, MOSFETs BSO4410T product image

BSO4410T

$1.34
  • Description:MOSFET N-CH 30V 11.1A 8SO
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:8f3d236fdca5 Category: Brand:

  
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BSO4410T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 11.1A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO4410T

  • Description:MOSFET N-CH 30V 11.1A 8SO
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:11.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:13mOhm @ 11.1A, 10V
  • Vgs(th) (Max) @ Id:2V @ 42µA
  • Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1280 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO4410T

BSO4410T

Single FETs, MOSFETs Overview

The BSO4410 is an N-Channel enhancement mode logic level MOSFET from Infineon Technologies, packaged in a surface-mount SO-8 configuration. It features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 11.1 A at 25°C. The device exhibits a maximum on-state resistance of 13 mΩ at VGS=10V and 18.8 mΩ at VGS=4.5V. Key dynamic parameters include a total gate charge of 21 nC and a reverse diode dv/dt rating of 6 kV/µs. Thermal performance supports operation up to 150°C with a power dissipation capacity of 2.5 W.

Single FETs, MOSFETs Feature Summary

  • Logic level gate drive capability for direct interface with standard digital logic circuits
  • Avalanche rated design supporting single pulse energy absorption
  • High speed reverse diode characterized by elevated dv/dt ratings
  • Optimized figure of merit balancing gate charge against on-state resistance

Single FETs, MOSFETs Applications

  • Fast switching power supply topologies
  • Low voltage DC-DC converter stages
  • Motor control driver circuits
  • Load switching applications requiring logic level compatibility

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S4096 against current Infineon catalogs to confirm availability status. Check for any recent product discontinuation notifications or lifecycle changes prior to finalizing procurement plans. Ensure component authenticity through authorized distribution channels.

Single FETs, MOSFETs Selection Notes

Select this component when designing low voltage systems requiring robust avalanche handling and high speed switching. Evaluate thermal constraints carefully as power dissipation is limited to 2.5 W. Confirm that the 30 V breakdown voltage provides adequate margin for the target application's peak transient voltages.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS/G01 family of small-signal transistors designed for efficient power management. It utilizes silicon technology optimized for low voltage operations. The SO-8 package facilitates automated surface mount assembly while providing sufficient thermal coupling for moderate power levels.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists for verified substitutes. Generic cross-references may not match the specific avalanche and dv/dt characteristics documented for this model.

BSO4410TBSO4410T
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