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BSO4420T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 13A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO4420T
- Description：MOSFET N-CH 30V 13A 8SO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs：33.7 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2213 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO4420T
Single FETs, MOSFETs Overview
The BSO4420 is an N-channel OptiMOS/Ge2 small-signal MOSFET in an SO-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 13 A at 25°C. The device exhibits a maximum on-resistance of 7.8 mΩ at VGS=10V and ID=13A, with a gate threshold voltage range of 1.2 V to 2 V. It supports pulsed currents up to 52 A and single-pulse avalanche energy of 230 mJ. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Logic level operation for direct drive compatibility
- Optimized gate charge and on-resistance product for efficiency
- Rated for avalanche energy and high dv/dt switching
Single FETs, MOSFETs Applications
- Fast switching power applications
- Low voltage DC-DC converters
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code Q67042-S4027 against current Infineon catalogs to confirm availability and compliance status. Ensure the SO-8 package footprint matches the design requirements. Check for any recent lifecycle notifications or obsolescence warnings directly from the manufacturer before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses in 30 V systems. The logic-level gate drive simplifies interface circuitry. Consider thermal management capabilities given the 2.5 W dissipation rating. Evaluate the avalanche rating if inductive load protection is required without external snubbers.
Single FETs, MOSFETs Part Context
Part of Infineon's OptiMOS/Ge2 small-signal transistor family. Designed for general-purpose switching in compact form factors. Utilizes trench technology to achieve low RDS(on) within the SO-8 surface-mount package.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other 30 V N-channel MOSFETs in SO-8 packages. Verify pinout compatibility and thermal resistance characteristics when substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
