BSO613SPV

Single FETs, MOSFETs Overview

The BSO613SPV G is a P-Channel enhancement mode power transistor in the SIPMO Power series, housed in a PG-SO-8 lead-free package. It features a drain-source voltage (VDS) of -60 V and a continuous drain current (ID) of -3.44 A at 25 °C. The device has a maximum on-state resistance (RDS(on)) of 0.13 Ω at VGS = -10 V. It supports pulsed drain currents up to -13.8 A and offers avalanche energy ratings of 150 mJ for single pulses. Thermal characteristics include a junction-to-soldering point resistance of 25 K/W and a total power dissipation of 2.5 W at 25 °C ambient temperature.

Single FETs, MOSFETs Feature Summary

• Avalanche rated capability for robust operation under transient conditions
• dv/dt rated reverse diode performance for high-speed switching applications
• Enhancement mode P-Channel construction for standard logic control compatibility

Single FETs, MOSFETs Applications

• High-side load switching circuits
• Motor driver bridge configurations
• Power management modules requiring avalanche resilience

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'G' corresponds to the lead-free PG-SO-8 package variant. Confirm that the required thermal management aligns with the specified RthJA values for the target PCB footprint. Ensure gate drive voltages remain within the ±20 V absolute maximum rating to prevent dielectric breakdown.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with integrated avalanche ruggedness is required. The low gate charge facilitates efficient driving in high-frequency applications. Consider the thermal derating curves for operation above 25 °C ambient temperature to ensure safe operating area compliance during continuous conduction.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMO Power series, designed for surface-mount applications. It utilizes advanced planar technology to achieve low on-resistance within a compact SO-8 form factor. The device is qualified according to automotive standards, indicating suitability for demanding industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the -60 V rating, P-Channel polarity, and PG-SO-8 package. Verify that alternative devices offer comparable avalanche energy ratings and dv/dt capabilities if those specific features are critical to the circuit design.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy rating?

The device is rated for 150 mJ of single-pulse avalanche energy under test conditions of ID = -3.44 A, VDD = -25 V, and RGS = 25 Ω.

Does the internal body diode support high dv/dt switching?

Yes, the reverse diode is dv/dt rated, capable of handling 6 kV/µs under specified test conditions involving IS = -3.44 A and VDS = -48 V.