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BSO613SPVGXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 8-SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO613SPVGXUMA1
- Description：MOSFET P-CH 8-SOIC
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3.44A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 3.44A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：875 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8-6
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO613SPVGXUMA1
Single FETs, MOSFETs Overview
The BSO613SPVGXUMA1 is a P-Channel SIPMOS power transistor in a PG-SO-8 package. It features a drain-source voltage of -60 V and a continuous drain current of -3.44 A at 25 °C. The maximum on-state resistance is 0.13 Ω at VGS = -10 V. The device supports pulsed drain currents up to -13.8 A and offers avalanche energy ratings of 150 mJ. Operating temperatures range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- P-Channel enhancement mode construction
- Avalanche rated capability
- Reverse diode dv/dt rated specification
Single FETs, MOSFETs Applications
- Power switching applications requiring P-Channel MOSFETs
- Automotive electronics systems
- Industrial control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm packaging details. Ensure the component meets all automotive qualification standards required for your specific application environment before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component based on its -60 V rating and low on-resistance characteristics suitable for moderate current switching. Consider thermal management requirements given the 2.5 W power dissipation limit and verify compatibility with standard SO-8 footprints during PCB layout design.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family, designed for robust power switching performance. It utilizes advanced planar technology to achieve high reliability and efficiency in compact surface-mount packages suitable for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for compatible P-Channel MOSFETs with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics when substituting existing designs.
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