BSO615CGXUMA1

$1.42

Description：MOSFET N/P-CH 60V 3.1A 8DSO
Series：SIPMOS®

SKU:9bf88ea229f6 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 3.1A 8DSO
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs：110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2V @ 20µA, 2V @ 450µA
Gate Charge (Qg) (Max) @ Vgs：22.5nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：380pF @ 25V, 460pF @ 25V
Power - Max：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：PG-DSO-8
Grade：-
Qualification：-

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BSO615CGXUMA1

Overview

The BSO615CGXUMA1 is a dual N- and P-channel enhancement mode MOSFET from the SIPMOS series, housed in a PG-DSO-8 package. It features a drain-source voltage of ±60 V and continuous drain currents of 3.1 A (N-channel) and -2 A (P-channel). The device exhibits low on-state resistance of 0.11 Ω (N-channel) and 0.3 Ω (P-channel), with a maximum power dissipation of 2 W at 25 °C. It supports avalanche energy ratings up to 47 mJ and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Dual N- and P-channel configuration for complementary circuit designs
Logic level gate drive capability for direct microcontroller interfacing
Avalanche rated construction for robust transient handling
RoHS compliant and lead-free manufacturing

Applications

Low-side and high-side switching applications
DC-DC converter output stages
Motor control circuits
Power management modules

Procurement Notes

Verify the component authenticity by checking the marking code '615C' on the PG-DSO-8 package against official Infineon specifications. Confirm the ordering suffix XUMA1 corresponds to tape and reel packaging requirements. Ensure the procurement source provides valid traceability documentation consistent with automotive or industrial quality standards.

Selection Notes

Select this component when a compact dual-channel solution is required for low-voltage switching. The logic level threshold allows efficient drive from standard 3.3 V or 5 V logic sources. Consider the thermal derating curves for high ambient temperatures and ensure the PCB footprint accommodates the specified thermal resistance characteristics for optimal heat dissipation.

Part Context

This part belongs to Infineon's SIPMOS small-signal transistor portfolio, designed for general-purpose switching. The PG-DSO-8 package offers a balance between current handling capacity and board space efficiency. It serves as a complement to single-channel MOSFETs in applications requiring paired N/P channel operation.