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BSO615NGHUMA1 is an N-channel enhancement-mode MOSFET from the Infineon SIPMOS series. It features a maximum drain-source voltage of 60 V and a continuous drain current of 2 A at 25°C. The device utilizes a DSO-8 surface-mount package with dimensions of 5 mm x 4 mm x 1.45 mm. Key electrical parameters include a maximum on-resistance of 150 mΩ at 4.5 V gate drive, a typical gate charge of 13.5 nC at 10 V, and a maximum power dissipation of 2 W. It operates within a temperature range of -55 °C to +150 °C.
Verify the exact part number suffix against official Infineon documentation to confirm specific tape-and-reel packaging or variant details. Ensure compatibility with standard SO-8 footprint designs. Confirm RoHS compliance status through the manufacturer's material declaration. Cross-reference thermal resistance values with your specific PCB layout requirements.
Select this component for low-voltage, moderate-current switching tasks requiring small form factors. Evaluate the 150 mΩ on-resistance against your conduction loss limits. Consider the 2 W power dissipation capability relative to your thermal design. Verify that the 60 V breakdown voltage provides adequate margin for your circuit's peak voltages.
This device belongs to the Infineon SIPMOS family, which focuses on cost-effective power solutions for general-purpose applications. The SIPMOS line typically targets consumer electronics and industrial control systems where space constraints and efficiency are balanced. It serves as a discrete alternative to integrated power stages in simple topologies.
Check for direct cross-reference part numbers in Infineon's replacement guide. Ensure any substitute matches the 60 V rating, 2 A current capacity, and DSO-8 package. Verify pinout compatibility before implementation.