BSO615NGHUMA1

BSO615NGHUMA1

$0.35
  • Description:MOSFET 2N-CH 60V 2.6A 8DSO
  • Series:SIPMOS®

SKU:efeea4f7e16c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 2.6A 8DSO
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:2.6A
  • Rds On (Max) @ Id, Vgs:150mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id:2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:380pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:PG-DSO-8
  • Grade:-
  • Qualification:-

Download product information

BSO615NGHUMA1

Overview

BSO615NGHUMA1 is an N-channel enhancement-mode MOSFET from the Infineon SIPMOS series. It features a maximum drain-source voltage of 60 V and a continuous drain current of 2 A at 25°C. The device utilizes a DSO-8 surface-mount package with dimensions of 5 mm x 4 mm x 1.45 mm. Key electrical parameters include a maximum on-resistance of 150 mΩ at 4.5 V gate drive, a typical gate charge of 13.5 nC at 10 V, and a maximum power dissipation of 2 W. It operates within a temperature range of -55 °C to +150 °C.

Feature Summary

  • Enhancement-mode N-channel silicon technology for efficient switching
  • Low on-resistance optimized for low-voltage applications
  • Surface-mount DSO-8 package for compact board integration

Applications

  • DC-DC converter circuits
  • Load switching applications
  • Power management modules

Procurement Notes

Verify the exact part number suffix against official Infineon documentation to confirm specific tape-and-reel packaging or variant details. Ensure compatibility with standard SO-8 footprint designs. Confirm RoHS compliance status through the manufacturer's material declaration. Cross-reference thermal resistance values with your specific PCB layout requirements.

Selection Notes

Select this component for low-voltage, moderate-current switching tasks requiring small form factors. Evaluate the 150 mΩ on-resistance against your conduction loss limits. Consider the 2 W power dissipation capability relative to your thermal design. Verify that the 60 V breakdown voltage provides adequate margin for your circuit's peak voltages.

Part Context

This device belongs to the Infineon SIPMOS family, which focuses on cost-effective power solutions for general-purpose applications. The SIPMOS line typically targets consumer electronics and industrial control systems where space constraints and efficiency are balanced. It serves as a discrete alternative to integrated power stages in simple topologies.

Replacement Considerations

Check for direct cross-reference part numbers in Infineon's replacement guide. Ensure any substitute matches the 60 V rating, 2 A current capacity, and DSO-8 package. Verify pinout compatibility before implementation.

BSO615NGHUMA1BSO615NGHUMA1
$0.35
Buy Now