BSP030,115

$0.88

Description：MOSFET N-CH 30V 10A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6a2f4f7b2681 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSP030,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 10A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP030,115

Description：MOSFET N-CH 30V 10A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：770 pF @ 24 V
FET Feature：-
Power Dissipation (Max)：8.3W (Tc)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP030,115

BSP030,115

Single FETs, MOSFETs Overview

The BSP030,115 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in a plastic SOT223 surface-mount package. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 10 A at 25 °C. The device features a maximum on-state resistance of 30 mΩ at VGS = 10 V and 50 mΩ at VGS = 4.5 V. Total power dissipation is rated at 8.3 W at 25 °C, with an operating junction temperature range from -65 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchMOS technology for fast switching performance.
Features low on-state resistance for efficient power handling.
Logic level compatible for direct interface with control circuits.
Designed for surface mount installation in compact assemblies.

Single FETs, MOSFETs Applications

Motor and actuator driver circuits
Battery management systems
High speed, low resistance switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code BSP030,115 against the manufacturer's latest documentation to confirm availability and compliance status. Ensure that the SOT223 package dimensions align with the target PCB footprint requirements. Cross-reference thermal resistance values with the intended heat sinking strategy to maintain junction temperatures within specified limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with logic-level drive capability is required for moderate current switching tasks. The SOT223 package offers a balance between thermal performance and board space efficiency. Consider the 30 V rating and 10 A current capacity relative to the load requirements. Evaluate the gate charge characteristics if high-frequency switching speeds are critical for the specific application design.

Single FETs, MOSFETs Part Context

The BSP030 belongs to the family of N-channel enhancement mode field-effect transistors produced by Nexperia. Originally developed under Philips Semiconductors, it represents a transition from VDMOS to TrenchMOS technology. This evolution provides improved switching characteristics and lower on-state resistance compared to previous generations, maintaining compatibility with standard surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Direct replacements must match the N-channel configuration, SOT223 package, and equivalent electrical ratings. Verify pinout compatibility to ensure seamless integration without circuit modification.