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BSP100,135 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is NEXPERIA BSP100 - 3.5A, 30V, 0.1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP100,135
- Description：NEXPERIA BSP100 - 3.5A, 30V, 0.1
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：8.3W (Tc)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP100,135
Single FETs, MOSFETs Overview
The BSP100,135 is an N-channel enhancement mode TrenchMOS transistor manufactured by Nexperia. It is housed in a SOT-223 surface-mount package. The device features a maximum drain-source voltage of 30V and a continuous drain current rating of 3.2A. Its on-state resistance is specified at 0.1 ohms. This component is designed for general-purpose power switching applications requiring efficient energy conversion.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchMOS technology for enhanced performance
- Designed for high-frequency operation with fast switching characteristics
- Low conduction losses due to low on-state resistance
Single FETs, MOSFETs Applications
- High frequency computer motherboard circuits
- DC-to-DC converters
- OR-ing applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix to ensure correct packaging configuration. Confirm that the component meets the required automotive or industrial qualification standards if applicable to your design. Check the latest datasheet for any updates regarding pinout or thermal characteristics before finalizing the bill of materials.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with moderate voltage ratings is required. The SOT-223 package offers a balance between current handling capability and board space efficiency. Ensure the application does not exceed the 30V breakdown voltage or the 3.2A current limit under all operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to Nexperia's portfolio of standard level N-channel enhancement mode field-effect transistors. These devices are engineered using silicon-based TrenchMOS technology to provide reliable performance in various electronic systems. The product line supports diverse applications ranging from consumer electronics to industrial control systems.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other N-channel MOSFETs with similar 30V/3.2A ratings in SOT-223 packages. Verify compatibility with existing gate drive voltages and thermal management requirements before substitution.
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