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BSP122,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 200V 550MA SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP122,115
- Description：MOSFET N-CH 200V 550MA SOT223
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.4V, 10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 750mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP122,115
Single FETs, MOSFETs Overview
The BSP122,115 is an N-channel enhancement mode vertical D-MOS transistor manufactured by Nexperia. It is housed in a SOT-223 surface-mount package with four leads. The device supports a maximum drain-source voltage of 200 V and a continuous DC drain current of 550 mA. Peak drain current capability reaches 3 A. The on-state resistance is specified at 2.5 Ω under standard conditions. Total power dissipation is rated at 1.5 W at 25 °C ambient temperature. The junction temperature limit is 150 °C.
Single FETs, MOSFETs Feature Summary
- Direct interface compatibility with CMOS and TTL logic families
- High-speed switching performance for rapid signal transitions
- Elimination of secondary breakdown effects during operation
Single FETs, MOSFETs Applications
- Line current interruptors in telephone sets
- Relay driver circuits
- High-speed transformer drivers
- Line transformer drivers
Single FETs, MOSFETs Procurement Notes
Verify the component authenticity against the official Nexperia datasheet specifications before integration. Confirm that the ordering suffix matches the required packaging configuration. Ensure thermal management designs account for the specific mounting pad requirements outlined in the absolute maximum ratings section to maintain reliability.
Single FETs, MOSFETs Selection Notes
Select this component when circuit designs require high-voltage handling capabilities combined with fast switching speeds. The SOT-223 package provides efficient heat transfer through the drain tab. Verify that the gate threshold voltage aligns with the driving logic levels available in the system architecture.
Single FETs, MOSFETs Part Context
This device belongs to the discrete semiconductor category within the Nexperia portfolio. It represents a vertical D-MOS technology designed for robust switching applications. The product supersedes earlier documentation from Philips Semiconductors following corporate restructuring.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's database for verified equivalent part numbers. Cross-reference pin configurations and electrical parameters carefully before substituting components in existing designs.
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