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BSP123L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 370MA SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP123L6327HTSA1 is an N-channel enhancement mode logic-level MOSFET from the SIPMOS series. It features a maximum drain-source voltage of 100 V and a continuous drain current of 0.37 A at 25°C. The device operates within a temperature range of -55°C to +150°C and is housed in a PG-SOT223 package with four pins. It includes an integrated reverse diode rated for 0.37 A continuous forward current.
Verify the specific ordering suffix L6327HTSA1 matches the required tape and reel packaging configuration. Confirm that the component meets the necessary automotive qualification requirements if deployed in vehicle systems. Ensure thermal design accounts for the specified junction-to-soldering point resistance values under actual operating conditions.
Select this component when a small-signal N-channel MOSFET with logic-level input is required. The 100 V breakdown voltage suits low-voltage power distribution tasks. Consider the thermal resistance characteristics and package size constraints during PCB layout planning to ensure adequate heat dissipation.
This part belongs to Infineon's SIPMOS family, designed for small-signal switching applications. The BSP123 variant specifically targets automotive and industrial environments where high reliability and compact surface-mount packaging are essential. It complements other logic-level MOSFETs in the lineup by offering optimized gate charge characteristics.
BSP123
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