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BSP125H6433XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP125H6433XTMA1
- Description：MOSFET N-CH 600V 120MA SOT223-4
- Series：SIPMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP125H6433XTMA1
Single FETs, MOSFETs Overview
The BSP125H6433XTMA1 is a single N-channel SIPMOS power transistor manufactured by Infineon Technologies. It features a PG-SOT223 package and operates with a drain-source breakdown voltage of 600 V and a continuous drain current of 0.12 A at 25°C. The device has a maximum on-state resistance of 45 Ω at VGS=10V and 60 Ω at VGS=4.5V. It supports an operating temperature range from -55°C to +150°C, includes dv/dt rating of 6 kV/µs, and is qualified according to AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode logic level MOSFET
- High dv/dt rated capability for fast switching applications
- AEC-Q101 qualified for automotive reliability
Single FETs, MOSFETs Applications
- Automotive load switching
- General purpose power switching
- Industrial control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6433 against official Infineon documentation to confirm reel quantity and packaging details. Ensure compatibility with PG-SOT223 footprint requirements during PCB design. Confirm RoHS compliance and halogen-free status as per IEC61249-2-21 standards before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage low-current switching applications requiring automotive qualification. Consider the thermal resistance characteristics and package limitations when designing heat dissipation strategies. Verify gate drive voltage levels to ensure optimal RDS(on) performance within specified limits.
Single FETs, MOSFETs Part Context
This part belongs to the BSP125 family of SIPMOS power transistors designed for robust performance in demanding environments. The H6433 suffix indicates specific tape and reel packaging configuration. It serves as a discrete solution for medium-power switching tasks where high voltage blocking capability is essential.
Single FETs, MOSFETs Replacement Considerations
Check official Infineon replacement lists for direct substitutes. Evaluate pinout compatibility and electrical parameter overlaps if considering alternative manufacturers. Ensure any replacement maintains AEC-Q101 qualification if used in automotive contexts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
