BSP129H6327XTSA1

Single FETs, MOSFETs Overview

The BSP129H6327XTSA1 is an N-channel depletion mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT223 package. It features a drain-source breakdown voltage of 240 V and a maximum on-state resistance of 6 Ω at VGS=10V. The device supports a continuous drain current of 0.35 A and power dissipation of 1.8 W. It includes dv/dt rating capabilities up to 6 kV/µs and operates within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation with low negative gate threshold voltage for constant current applications
• High dv/dt rated capability suitable for demanding switching environments
• Automotive qualification compliant with AEC-Q101 standards
• Threshold voltage sorted into specific bands indicated on the reel label

Single FETs, MOSFETs Applications

• Constant current source circuits
• High-frequency switching designs
• Compact electronic system integration

Single FETs, MOSFETs Procurement Notes

Verify the specific threshold voltage band required for your design, as the component is supplied sorted by VGS(th) ranges. Confirm that the PG-SOT223 package dimensions align with your PCB footprint requirements. Ensure the depletion mode characteristic matches your circuit logic, as this device remains conductive at zero gate-source voltage.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on behavior is necessary for the application architecture. The high breakdown voltage allows use in higher voltage systems compared to standard small-signal transistors. Consider the thermal resistance characteristics if operating near the upper temperature limits or requiring efficient heat dissipation through the soldering point.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon SIPMOS family of small-signal transistors. These devices are engineered for robust performance in compact form factors. The H6327 suffix indicates a specific tape and reel packaging configuration containing 1000 pieces per reel, designed for automated surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the N-channel depletion mode specification and PG-SOT223 package. Verify that substitute components meet the 240 V breakdown voltage and similar thermal resistance values to ensure circuit compatibility without redesign.