BSP129L6327

Single FETs, MOSFETs Overview

The BSP129L6327 is a single N-channel depletion mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-223-4 surface-mount package. The device features a drain-source breakdown voltage of 240 V and a continuous drain current rating of 350 mA at 25°C. Key electrical parameters include a maximum on-resistance of 6.5 Ohms, a gate-source voltage range of -20 V to +20 V, and a typical gate charge of 3.8 nC. It supports a power dissipation of 1.8 W and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation ensures the device remains conductive at zero gate-source voltage.

Single FETs, MOSFETs Applications

• Automotive applications requiring AEC-Q101 qualification

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix L6327 matches your bill of materials. Check for RoHS compliance details and ensure the SOT-223-4 footprint aligns with your PCB design constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on behavior is required for constant current source designs. The high breakdown voltage suits medium-voltage switching tasks. Ensure the thermal management strategy accommodates the 1.8 W dissipation limit in the target operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the BSP129 series of depletion mode MOSFETs from Infineon. These devices are designed for compact designs and high-frequency switching. The series offers various voltage ratings and packaging options to support diverse electronic circuit requirements.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with enhancement mode devices without rigorous validation.