BSP129L6327HTSA1

$0.39

Description：MOSFET N-CH 240V 350MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Bulk

SKU:c4b6dff8b21e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP129L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 240V 350MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP129L6327HTSA1

Description：MOSFET N-CH 240V 350MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Bulk
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：240 V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id：1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs：5.7 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：108 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4-21
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP129L6327HTSA1

BSP129L6327HTSA1

Single FETs, MOSFETs Overview

The BSP129L6327HTSA1 is an N-channel depletion mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It operates in a PG-SOT223 package with a drain-source breakdown voltage of 240 V and a maximum continuous drain current of 0.35 A at 25 °C. The device features a low on-state resistance of 6 Ω at VGS=10 V and supports high dv/dt ratings of 6 kV/µs. Qualified under AEC-Q101, it functions within a junction temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

Depletion mode operation for normally-on functionality
High dv/dt rating capability
Automotive grade qualification

Single FETs, MOSFETs Applications

Constant current source circuits
High-frequency switching applications
Compact power design implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific threshold voltage band (J through N) required for your application, as the L6327 suffix indicates standard packaging without sorted bands. Confirm that the non-dry pack format meets your storage and soldering requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel MOSFET is required. Ensure the circuit design accommodates the negative gate threshold voltage range. Verify thermal management capabilities against the specified thermal resistance values for your PCB footprint.

Single FETs, MOSFETs Part Context

This part belongs to the BSP129 series of SIPMOS transistors. It shares the depletion mode characteristic with other devices in the lineup but differs in package type and specific electrical parameters compared to variants like the BSP149.