BSP130,115

$0.50

Description：MOSFET N-CH 300V 350MA SOT223
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8b3a9d916273 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSP130,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 300V 350MA SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP130,115

Description：MOSFET N-CH 300V 350MA SOT223
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP130,115

BSP130,115

Single FETs, MOSFETs Overview

The BSP130,115 is an N-channel enhancement mode vertical D-MOS transistor manufactured by Nexperia. It operates with a drain-source voltage of 300 V and a continuous drain current of 350 mA. The device features a maximum on-state resistance of 6 Ω at 250 mA and 10 V gate drive. Thermal performance includes a junction-to-ambient resistance of 83.3 K/W and a total power dissipation of 1.5 W at 25 °C ambient temperature.

Single FETs, MOSFETs Feature Summary

Direct interface compatibility with CMOS and TTL logic families
High-speed switching capability without secondary breakdown

Single FETs, MOSFETs Applications

Line current interruptor in telephone sets
Relay drivers
High-speed line transformer drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm package type and tape/reel specifications. Confirm RoHS compliance status for the exact part number variant. Ensure the component meets the required thermal management standards for the intended PCB layout. Check for any recent datasheet supersessions or obsolescence notices before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage isolation with low-current switching capabilities. The SOT223 package provides adequate heat dissipation for moderate power levels. Consider the threshold voltage range when designing the gate drive circuitry to ensure reliable turn-on across varying temperatures.

Single FETs, MOSFETs Part Context

This discrete semiconductor belongs to the vertical D-MOS transistor family designed for general-purpose switching. It serves as a robust alternative to standard MOSFETs in high-voltage, low-current scenarios. The technology supports direct logic interfacing, simplifying driver circuit design for industrial and telecommunications equipment.

Single FETs, MOSFETs Replacement Considerations

Check for equivalent N-channel D-MOS transistors with similar 300 V ratings and SOT223 packaging. Verify that substitute parts meet the same thermal resistance and switching speed requirements. Ensure pinout compatibility to avoid redesigning the printed circuit board layout during replacement.