BSP135 E6327

Single FETs, MOSFETs Overview

The Infineon Technologies BSP135 E6327 is a single N-channel depletion mode MOSFET from the SIPMOS series, manufactured using silicon technology. It features a 600 V drain-source breakdown voltage and a continuous drain current of 120 mA at 25°C. The device is housed in a surface-mount SOT-223-4 package with a maximum power dissipation of 1.8 W. Key electrical parameters include a gate-source threshold voltage range of -2.1 V to -1 V, a typical gate charge of 3.7 nC, and an on-resistance of up to 45 Ohms at 10 V gate drive. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation ensures the device is normally on at zero gate-source voltage.
• High-voltage capability with a 600 V drain-source breakdown rating for robust performance.
• Automotive-grade reliability certified under the AEC-Q101 standard.
• Surface-mount SOT-223-4 packaging designed for efficient thermal management.

Single FETs, MOSFETs Applications

• LED driver circuits
• Industrial control systems
• Automotive electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'E6327' against official Infineon documentation to confirm tape-and-reel specifications and exact ordering details. Ensure compatibility with existing PCB footprints for the SOT-223-4 package. Confirm that the depletion mode characteristic aligns with the circuit design requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a normally-on high-voltage switch. The 600 V rating suits medium-voltage isolation tasks. Verify that the negative threshold voltage (-2.1 V to -1 V) matches the available control logic levels. Consider the 1.8 W power dissipation limit when designing thermal solutions for the SOT-223 package.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon BSP135 series of N-channel depletion mode MOSFETs. These devices are engineered for high-voltage switching applications where a default conducting state is required. The SIPMOS technology provides a balance of low on-resistance and high blocking voltage in a compact surface-mount form factor suitable for modern electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains the N-channel depletion mode characteristic and meets or exceeds the 600 V voltage rating and SOT-223-4 package dimensions.

Single FETs, MOSFETs FAQ

What is the default state of the BSP135 E6327?

It is a depletion mode device, meaning it conducts current between the drain and source when the gate-source voltage is zero.

Is this component qualified for automotive use?

Yes, the BSP135 series is qualified according to the AEC-Q101 standard.