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BSP135H6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP135H6327XTSA1 is an N-channel depletion mode MOSFET from the SIPMOS series, housed in a PG-SOT223 package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 0.12 A at 25 °C. The device has a maximum power dissipation of 1.8 W and operates within a temperature range of -55 °C to 150 °C. Key electrical parameters include a typical gate threshold voltage of -1.4 V, a maximum on-state resistance of 60 Ω at VGS=0V, and a total gate charge of 3.7 nC. It is qualified according to AEC-Q101 standards.
Verify the specific threshold voltage band letter printed on the reel label matches project requirements, as the component ships sorted into bands (J, K, L, M, N). Confirm that the PG-SOT223 footprint aligns with the PCB layout. Ensure thermal management strategies account for the specified junction-to-soldering point thermal resistance values under intended operating conditions.
Select this component for applications requiring high-voltage handling in a small surface-mount package. The depletion mode characteristic makes it suitable for constant current source designs where the device conducts at zero gate-source voltage. Consider the negative threshold voltage range when designing gate drive circuits to ensure reliable turn-off capabilities across the specified temperature range.
This part belongs to Infineon's SIPMOS small-signal transistor family, designed for high-frequency switching and compact layouts. The BSP135 variant specifically targets high-voltage applications up to 600 V. The H6327 suffix indicates tape and reel packaging with 1000 pieces per reel, sorted by threshold voltage bands.
No public confirmed substitute part numbers are provided in the documentation.
The letter printed on the reel label indicates the specific threshold voltage band (J, K, L, M, or N) of the transistors contained within that reel. Each reel contains devices from a single band.
Yes, the datasheet specifies that the component features Pb-free lead plating and is RoHS compliant.
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