BSP135IXTSA1

Single FETs, MOSFETs Overview

The BSP135IXTSA1 is an N-channel depletion mode small-signal MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount SOT-223-4 package. The device features a drain-source breakdown voltage of 600 V and a continuous drain current of 120 mA at 25°C. Its on-resistance is specified at 30 Ohms, with a gate threshold voltage of 2.1 V. The component supports a maximum power dissipation of 1.8 W and operates within a temperature range of -55°C to +150°C. It holds AEC-Q101 qualification for automotive reliability.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation provides normally-on functionality suitable for constant current source applications
• High voltage capability with 600 V drain-source breakdown rating
• Automotive grade qualification ensuring high reliability standards

Single FETs, MOSFETs Applications

• Switching mode power supplies (SMPS)
• Industrial control systems
• Consumer electronics circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact electrical parameters required for your design, particularly the 600V rating and depletion mode characteristics. Cross-reference the AEC-Q101 certification status if automotive compliance is mandatory for your project requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on switch or constant current source is required in high-voltage environments. The 600V rating makes it suitable for industrial and consumer applications where higher voltage isolation is necessary compared to standard low-voltage logic-level transistors. Consider the SOT-223 package size for space-constrained PCB layouts requiring robust thermal performance.

Single FETs, MOSFETs Part Context

This component belongs to the BSP135 series of small-signal MOSFETs designed for industrial and automotive markets. The series offers various voltage ratings and packages, providing designers with options for different power and switching requirements. As a depletion mode device, it differs from standard enhancement mode MOSFETs by conducting current when the gate-source voltage is zero.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified equivalents. Generic replacements may not match the specific depletion mode characteristics or AEC-Q101 automotive qualification required for this application.